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NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from
the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may
be used on lines where the signal polarities are above and below ground. They provide a
surge capability of up to 130 W per line for a 8/20 μ s waveform.
signal line
PESD5V0S1Bx
GND
006aaa057
Fig 8.
Bidirectional protection of one signal line
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and surge transients.
The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESD5V0S1BA_BB_BL_4
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
8 of 15
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PESD5V0S1BB/DG,115 制造商:NXP Semiconductors 功能描述:30kV Tape & Reel
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PESD5V0S1BL 制造商:NXP Semiconductors 功能描述:
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PESD5V0S1BL,315 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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PESD5V0S1BLD 制造商:NXP Semiconductors 功能描述:DIODE BIRDIR ESD 5V SOD882D 制造商:NXP Semiconductors 功能描述:DIODE, BIRDIR, ESD, 5V, SOD882D
PESD5V0S1BLD,315 功能描述:ESD 抑制器 9.5 V 45 pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C